In February, Samsung began shipping its HBM4 memory to customers, promising to deliver samples of the enhanced HBM4E later this year. Now, that promise is realized. The new HBM4E variant offers greater capacity within the same 12-layer design while providing increased bandwidth and lower operating temperatures.
The current HBM4E design features a 12-layer configuration, enabling a capacity of 48GB, a notable increase from HBM4's 36GB. Samsung is also working on 32GB (8-layer) and 64GB (16-layer) versions to provide customers with more design options.
Aside from the 33% boost in capacity, HBM4E operates approximately 20% faster, with a per-pin speed of 14Gbps, resulting in a total bandwidth of 3.6 terabytes per second per stack. In contrast, HBM4 achieves 11.7Gbps per pin, also totaling 3.6 terabytes per second per stack.
A stack of Samsung HBM4E memoryThe HBM4E technology employs a combination of 6th generation “1c” (10nm class) for the memory dies and a 4nm logic base die. Samsung has redesigned it to enhance energy efficiency by 16%, meaning the memory consumes less power and generates reduced heat. Additionally, the new design decreases thermal resistance by at least 14%, simplifying cooling efforts.
Samsung asserts its capacity to produce HBM4 memory is expanding, and the new HBM4E will further boost AI system performance. The 14Gbps bandwidth could also be upgraded to 16Gbps in future versions.
“Following the successful mass production of HBM4, Samsung has once again demonstrated its distinct technological edge with HBM4E. Through our advanced manufacturing capabilities and preemptive infrastructure investments, we will continue to drive the growth of the global AI memory market,” stated Sang Joon Hwang, Executive Vice President and Head of Memory Development at Samsung Electronics.
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