This February, Samsung began shipping HBM4 memory to its customers, with plans to provide samples of the upgraded HBM4E later this year. Now that timeframe has arrived. The improved variant retains the 12-layer design while offering increased capacity, enhanced bandwidth, and better cooling.
The current design for Samsung HBM4E features a 12-layer configuration, allowing for a capacity of 48GB, an increase from the 36GB offered by HBM4. Samsung is also working on 32GB (8-layer) and 64GB (16-layer) options to provide clients with more flexibility in their designs.
In addition to a 33% increase in capacity, HBM4E delivers approximately 20% faster speeds, with a per-pin speed of 14Gbps, resulting in a total bandwidth of 3.6 terabytes per second per stack. By comparison, HBM4 operates at 11.7Gbps per pin and also offers 3.6 terabytes per second per stack.
A stack of Samsung HBM4E memoryThe HBM4E technology incorporates a sixth-generation “1c” (10nm class) design for the memory dies, alongside a 4nm logic base die. This new design enhances energy efficiency by 16%, resulting in lower power consumption and reduced heat generation. Furthermore, thermal resistance is decreased by at least 14%, facilitating better cooling.
Samsung asserts that its production capacity for HBM4 memory is expanding, and the introduction of HBM4E will further accelerate AI system performance. There is even potential for future advancements, as the current 14Gbps bandwidth could be increased to 16Gbps.
“Following the successful mass production of HBM4, Samsung has once again demonstrated its distinct technological edge with HBM4E. Through our advanced manufacturing capabilities and preemptive infrastructure investments, we will continue to drive the growth of the global AI memory market,” stated Sang Joon Hwang, Executive Vice President and Head of Memory Development at Samsung Electronics.
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