Artificial intelligence hardware relies on faster memory than traditional DDR; thus, High Bandwidth Memory (HBM) is preferred. SK hynix has announced the commencement of sample shipments for its latest HBM4E memory to customers.
The HBM4E offers an impressive bandwidth of 16Gbps per pin, surpassing the previous HBM4 standard, which provided 10Gbps per pin. Samsung has also begun sampling its own HBM4E solution, boasting speeds of 14Gbps per pin.
The currently shipping design includes 12 dies stacked vertically, yielding a total capacity of 48GB per stack. Notably, most AI accelerator designs leverage multiple stacks to meet their demanding performance requirements.
SK hynix also highlights that its HBM4E memory achieves a 20% increase in power efficiency compared to the HBM4. The memory is constructed using MR-MUF (Mass Reflow Molded Underfill), a technique that incorporates protective liquid among the silicon dies to safeguard the circuits. This innovation results in 17% lower heat resistance compared to the previous design, enhancing overall cooling efficiency.
SK hynix’s HBM4E memory does 16Gbps per pin, is 20% more power efficientAccording to SK hynix's press release, "The company was able to deliver samples of the 12-stack HBM4E on schedule thanks to its advanced development and production expertise in HBM. We are committed to collaborating closely with partners for timely mass production."
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